ST7LIT10BF1 STMicroelectronics, ST7LIT10BF1 Datasheet - Page 140

• Manufacturer Part Number: ST7LIT10BF1
• Description: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
• Manufacturer: STMicroelectronics

Specifications of ST7LIT10BF1

• Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• 128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55˚C.
• Clock Sources: Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow

ST7LITE1xB
ADC CHARACTERISTICS (Cont’d)
ADC Accuracy with V
Notes:
1. Data based on characterization results. Not tested in production.
2. Injecting negative current on any of the analog input pins significantly reduces the accuracy of any conversion being
performed on any analog input.
Analog pins can be protected against negative injection by adding a Schottky diode (pin to ground). Injecting negative
current on digital input pins degrades ADC accuracy especially if performed on a pin close to the analog input pins.
Any positive injection current within the limits specified for I
ADC accuracy.
3. Data based on characterization results over the whole temperature range, monitored in production.
Figure 111. ADC Accuracy Characteristics with amplifier disabled
140/159
Symbol
1023
1022
1021
E
E
E
E
E
7
6
5
4
3
2
1
O
G
0
D
T
L
V
SS
Digital Result ADCDR
1LSB
1
Total unadjusted error
Offset error
Gain Error
Differential linearity error
Integral linearity error
E
O
2
IDEAL
3
=
V
------------------------------- -
4
DD
Parameter
DD
1024
=5.0V
–
5
1 LSB
V
SS
3)
E
6
T
IDEAL
3)
E
7
L
(2)
E
D
1021 1022 1023 1024
(3)
f
CPU
(1)
=8MHz, f
INJ
E
Conditions
(PIN) and ΣI
G
V
DD
ADC
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
=4MHz
T
O
G
D
L
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Differential Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
INJ
V
in
(PIN) in
(LSB
IDEAL
Section 13.8
Typ
)
0.5
1.5
1.5
4
3
does not affect the
Max
6
5
4
3
3
1)
1)
1)
2)
2)
Unit
LSB