ST7LIT10BF1 STMicroelectronics, ST7LIT10BF1 Datasheet - Page 15

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ST7LIT10BF1

Manufacturer Part Number
ST7LIT10BF1
Description
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7LIT10BF1

Up To 4 Kbytes Single Voltage Extended Flash (xflash) Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
128 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55˚C.
Clock Sources
Internal 1% RC oscillator (on ST7FLITE15B and ST7FLITE19B), crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Auto Wake-up from Halt, Wait and Slow
5 DATA EEPROM
5.1 INTRODUCTION
The Electrically Erasable Programmable Read
Only Memory can be used as a non volatile back-
up for storing data. Using the EEPROM requires a
basic access protocol described in this chapter.
Figure 7. EEPROM Block Diagram
EECSR
0
ADDRESS BUS
0
DECODER
ADDRESS
0
0
4
0
DECODER
0
4
4
ROW
E2LAT
5.2 MAIN FEATURES
E2PGM
Up to 32 Bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle
duration
WAIT mode management
Readout protection
128
MULTIPLEXER
DATA
(1 ROW = 32 x 8 BITS)
MEMORY MATRIX
HIGH VOLTAGE
DATA BUS
EEPROM
PUMP
DATA LATCHES
128
32 x 8 BITS
ST7LITE1xB
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