ACS120 STMicroelectronics, ACS120 Datasheet - Page 7

• Manufacturer Part Number: ACS120
• Description: Overvoltage protected AC switch
• Manufacturer: STMicroelectronics

Specifications of ACS120

• Blocking Voltage: VDRM / VRRM = +/-700V
• Avalanche Controlled: VCL typ = 1100 V
• Nominal Conducting Current: IT(RMS) = 2A
• Gate Triggering Current: IGT< 10 mA
• High Noise Immunity: static dV/dt >500V/µs

Fig. 4: Relative variation of gate trigger current,
holding current and latching versus junction
temperature (typical values).
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 6: Relative variation of critical rate of de-
crease of main current versus reapplied dV/dt
(typical values).
Fig. 8: Surge peak on-state current versus number
of cycles.
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
22
20
18
16
14
12
10
8
6
4
2
0
-40 -30 -20 -10
1
I
0
TSM
I
(dI/dt) [(dV/dt) ] / Specified (dI/dt)
GT H L
, I , I [T ] / I
(A)
I & I
L
c
5
I
GT
H
j
Repetitive
T =105°C
10
ab
GT H L
0
c
Non repetitive
T initial=25°C
, I , I [T = 25°C]
j
10
15
10
20
Number of cycles
j
20
(dV/dt) (V/µs)
30
T (°C)
40 50
j
25
c
c
60
30
70
100
80
35
90 100 110 120 130
40
t=20ms
V
OUT
=400V
45
1000
50
Fig. 5: Relative variation of static dV/dt versus
junction temperature.
Fig. 7: Relative variation of critical rate of decrease
of main current versus junction temperature.
20
18
16
14
12
10
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I²t.
1000
8
7
6
5
4
3
2
1
0
8
6
4
2
0
100
25
10
dV/dt [T ] / dV/dt [T = 125°C]
25
1
(dI/dt) [Tj] / (dI/dt) [T = 125°C]
0.01
I
TSM
c
(A), I²t (A²s)
j
50
50
dI/dt limitation:
j
c
50A/µS
0.10
j
T (°C)
T (°C)
j
75
t (ms)
j
ACS120-7SB/SFP/ST
75
p
1.00
100
100
I
I²t
TSM
T initial=25°C
V
j
V
OUT
OUT
=400V
=460V
7/11
10.00
125
125