STF20N95K5 STMicroelectronics, STF20N95K5 Datasheet - Page 4

• Manufacturer Part Number: STF20N95K5
• Description: N-channel 950 V, 0.275 Ohm, 17.5 A, TO-220FP Zener-protected SuperMESH(TM) 5 Power MOSFET
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/21
Electrical characteristics
(T
Table 4.
Table 5.
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as C
V
Symbol
Symbol
C
R
C
CASE
V
(BR)DSS
C
o(er)
I
I
C
V
when V
DS(on)
C
o(tr)
GS(th)
Q
Q
R
DSS
GSS
Q
DS
oss
rss
iss
gs
gd
G
g
(1)
(2)
increases from 0 to 80% V
= 25 °C unless otherwise specified)
DS
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance time
related
Equivalent capacitance
energy related
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
increases from 0 to 80% V
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 16825 Rev 3
STB20N95K5, STF20N95K5, STP20N95K5, STW20N95K5
DSS
V
V
f = 1MHz open drain
V
V
(see
I
V
V
V
V
V
D
GS
GS
DS
DD
GS
GS
DS
DS
DS
= 1 mA, V
=100 V, f=1 MHz, V
= 760 V, I
=10 V
= 0, V
= 950 V,
= 950 V, Tc=125 °C
= ± 20 V
= V
= 10 V, I
Figure
Test conditions
Test conditions
GS
DS
, I
19)
D
GS
D
= 0 to 760 V
D
= 9 A
= 100 µA
= 0
= 9 A
GS
=0
Min.
Min.
950
3
-
-
-
-
-
0.275 0.330
1500
Typ.
Typ.
170
3.5
80
65
40
25
5
8
4
Max.
Max.
±10
50
oss
1
5
-
-
-
-
-
oss
when
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
pF
µA
µA
µA
V
V
Ω
Ω