STI300N4F6

Manufacturer Part NumberSTI300N4F6
DescriptionN-channel 40 V, 1.4 mOhm, 160 A, I2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
ManufacturerSTMicroelectronics
STI300N4F6 datasheets

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STI300N4F6
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
V
Drain-source voltage (V
DS
V
Gate-source voltage
GS
(1)
I
Drain current (continuous) at T
D
(1)
I
Drain current (continuous) at T
D
I
Drain current (pulsed)
DM
P
Total dissipation at T
TOT
E
Single pulse avalanche energy
AS
T
Storage temperature
stg
T
Operating junction temperature
j
1. Limited by wire bonding
Table 3.
Thermal data
Symbol
R
Thermal resistance junction-case max.
thj-case
Table 4.
Avalanche characteristics
Symbol
Avalanche current, repetitive or not-repetitive
I
AS
(pulse width limited by T
Single pulse avalanche energy
E
AS
(starting T
Parameter
= 0)
GS
= 25 °C
C
= 100 °C
C
= 25 °C
C
Parameter
Parameter
max)
j
= 25 °C, I
= I
, V
= 50 V)
j
D
AS
DD
Doc ID 18062 Rev 1
Electrical ratings
Value
Unit
40
V
± 20
V
160
A
160
A
640
A
300
W
TBD
mJ
- 55 to 175
°C
Value
Unit
0.5
°C/W
Max value
Unit
TBD
A
TBD
mJ
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