STI300N4F6

Manufacturer Part NumberSTI300N4F6
DescriptionN-channel 40 V, 1.4 mOhm, 160 A, I2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
ManufacturerSTMicroelectronics
STI300N4F6 datasheets

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Test circuits
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
R
L
V
D
V
GS
R
D.U.T.
G
P
W
Figure 4.
Test circuit for inductive load
switching and diode recovery times
A
A
A
D
FAST
L=100μH
G
D.U.T.
DIODE
S
B
B
B
25 Ω
D
G
R
S
G
Figure 6.
Unclamped inductive waveform
V
D
I
DM
I
D
V
DD
6/10
Figure 3.
3.3
2200
μF
μF
V
DD
V
=20V=V
i
P
W
AM01468v1
Figure 5.
3.3
1000
μF
μF
V
DD
V
i
P
w
AM01470v1
Figure 7.
V
(BR)DSS
0
V
DD
10%
0
AM01472v1
Doc ID 18062 Rev 1
STI300N4F6
Gate charge test circuit
12V
47kΩ
100nF
I
=CONST
G
100Ω
GMAX
2200
μF
2.7kΩ
47kΩ
1kΩ
Unclamped inductive load test
circuit
L
V
D
2200
3.3
μF
I
D
D.U.T.
Switching time waveform
t
on
t
off
t
r
td
off
td
on
90%
10%
V
DS
90%
V
GS
V
DD
1kΩ
D.U.T.
V
G
AM01469v1
V
μF
DD
AM01471v1
t
f
90%
10%
AM01473v1