STP80NS04ZB STMicroelectronics, STP80NS04ZB Datasheet

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STP80NS04ZB

Manufacturer Part Number
STP80NS04ZB
Description
N-CHANNEL CLAMPED 7.5mOhm - 80A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company’s Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such
environment. Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
May 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP80NS04ZB
V
V
V
TYPICAL R
100% AVALANCHE TESTED
LOW CAPACITANCE AND GATE CHARGE
175
TEMPERATURE
ABS, SOLENOID DRIVERS
MOTOR CONTROL
DC-DC CONVERTERS
Pulse width limited by safe operating area.
Symbol
ESD(G-S)
ESD(G-D)
ESD(D-S)
I
DM
V
V
V
P
T
I
I
TYPE
I
I
DG
GS
T
DG
GS
stg
DS
D
D
as
tot
o
(
j
C MAXIMUM JUNCTION
those
Drain-source Voltage (V
Drain-gate Voltage
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Gate Current (continuous)
Gate SourceCurrent (continuous)
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate-Source ESD (HBM - C = 100pF, R=1.5 k )
Gate-Drain ESD (HBM - C = 100pF, R=1.5 k )
Drain-source ESD (HBM - C = 100pF, R=1.5 k )
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.0075
CLAMPED
encountered
FULLY PROTECTED MESH OVERLAY™ MOSFET
V
DSS
N-CHANNEL CLAMPED 7.5m - 80A TO-220
<0.008
R
Parameter
in
DS(on)
C
= 25°C
the
GS
= 0)
automotive
C
C
80 A
= 25°C
= 100°C
I
D
INTERNAL SCHEMATIC DIAGRAM
CLAMPED
CLAMPED
CLAMPED
-65 to 175
-40 to 175
Value
STP80NS04ZB
± 50
± 50
1.33
320
200
80
60
4
4
4
TO-220
1
PRELIMINARY DATA
2
3
W/°C
Unit
mA
mA
kV
kV
kV
°C
°C
W
V
V
V
A
A
A
1/6

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STP80NS04ZB Summary of contents

Page 1

... This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice DS(on the automotive INTERNAL SCHEMATIC DIAGRAM Parameter = 25° 100° 25°C C STP80NS04ZB PRELIMINARY DATA TO-220 Value Unit CLAMPED V CLAMPED V CLAMPED ± ± ...

Page 2

... STP80NS04ZB THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS (starting ° ELECTRICAL CHARACTERISTICS (T OFF ...

Page 3

... (Inductive Load, Figure 5) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) STP80NS04ZB Min. Typ. Max. Unit 80 105 Min. Typ. Max. Unit 115 150 ns 80 105 ns 210 280 ns Min ...

Page 4

... STP80NS04ZB Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... MIN. 4.60 0.173 1.32 0.048 2.72 0.094 1.27 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 16.4 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 STP80NS04ZB inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 L4 P011C 5/6 ...

Page 6

... STP80NS04ZB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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