BULB39D STMicroelectronics, BULB39D Datasheet

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BULB39D

Manufacturer Part Number
BULB39D
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS
DESCRIPTION
The BULB39D is manufactured using high
voltage Multi Epitaxial Planar technology to
enhance switching speeds while maintaining wide
RBSOA.
The BUL series is designed for use in electronics
transformers for halogen lamps.
ABSOLUTE MAXIMUM RATINGS
August 2001
Symbol
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
HIGH RUGGEDNESS
SURFACE-MOUNTING D
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
V
V
V
T
P
I
I
CES
CEO
EBO
I
CM
I
BM
T
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
2
Parameter
PAK (TO-263)
p
c
<5 ms)
= 25
C
p
= 0)
<5 ms)
B
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
(Suffix "T4")
Value
(TO-263)
850
450
150
70
D
9
4
8
2
4
2
PAK
1
BULB39D
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/6

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BULB39D Summary of contents

Page 1

... APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS SWITCH MODE POWER SUPPLIES DESCRIPTION The BULB39D is manufactured using high voltage Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps. ...

Page 2

... BULB39D THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter Cut-off Current EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BULB39D 3/6 ...

Page 4

... BULB39D Inductive Fall Time Reverse Biased SOA 4/6 Inductive Storage Time ...

Page 5

... TYP. MAX. MIN. 4.60 0.173 2.69 0.098 0.23 0.001 0.93 0.027 1.70 0.044 0.60 0.017 1.36 0.048 9.35 0.352 8.00 10.40 0.393 8.50 5.28 0.192 15.85 0.590 1.4 0.050 1.75 0.055 3.2 0.094 0. BULB39D inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.068 0.126 0.016 P011P6/G o 5/6 ...

Page 6

... BULB39D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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