BULB128 STMicroelectronics, BULB128 Datasheet

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BULB128

Manufacturer Part Number
BULB128
Description
HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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Part Number
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Quantity
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Part Number:
BULB128
Manufacturer:
ST
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BULB128-1
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Part Number:
BULB128D
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BULB128D-BT4
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BULB128DT4
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BULB128DT4
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20 000
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BULB128DT4
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5 000
APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi-Epitaxial
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
September 2003
Ordering Code
Symbol
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
THROUGH HOLE I
PACKAGE IN TUBE (SUFFIX "-1")
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
V
V
V
BULB128-1
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
Planar
BULB128
Marking
2
PAK (TO-262) POWER
technology
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
B
Shipment
BE
o
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
for
Tube
= 0)
high
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
(Suffix "-1")
Value
(TO-262)
700
400
150
70
9
4
8
2
4
I
2
PAK
BULB128-1
1 2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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BULB128 Summary of contents

Page 1

... September 2003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Shipment Tube INTERNAL SCHEMATIC DIAGRAM for high = < 5 ms) p < BULB128 PAK (TO-262) (Suffix "-1") Value Unit 700 V 400 ...

Page 2

... BULB128-1 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter-Base Voltage EBO ( Collector-Emitter CEO(sus) Sustaining Voltage ( Collector Cut-Off CEO Current ( Collector-Emitter CE(sat) Saturation Voltage ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BULB128-1 3/7 ...

Page 4

... BULB128-1 Inductive Fall Time Resistive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time Resistive Load Storage Time ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor BULB128-1 5/7 ...

Page 6

... BULB128-1 TO-262 (I DIM. MIN. A 4.4 A1 2.49 B 0.7 B2 1.14 C 0.45 C2 1.23 D 8. 13.1 L1 3.48 L2 1.27 L2 6/7 2 PAK) MECHANICAL DATA mm TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.93 0.027 1.7 0.044 0.6 0.017 1.36 0.048 9.35 0.352 2.7 0.094 10.4 0.393 13.6 0.515 3.78 0.137 1.4 0.050 L1 D inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 ...

Page 7

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com BULB128-1 7/7 ...

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