BULD118D STMicroelectronics, BULD118D Datasheet

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BULD118D

Manufacturer Part Number
BULD118D
Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Manufacturer
STMicroelectronics
Datasheet

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APPLICATIONS:
DESCRIPTION
The device is manufactured using high voltage
Multi
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
June 2001
Symbol
INTEGRATED ANTIPARALLEL
COLLECTOR- EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
V
V
V
T
P
I
I
CEO
CES
EBO
I
CM
T
I
BM
stg
C
B
tot
j
Epitaxial Planar
Collector-Emitter Voltage (V
Collector-Emitter Voltage (I
Emitter-Base Voltage (I
Collector Current
Collector Peak Current (t
Base Current
Base Peak Current (t
Total Dissipation at T
Storage Temperature
Max. Operating Junction Temperature
®
technology for
Parameter
p
c
< 5 ms)
= 25
C
p
= 0)
< 5 ms)
B
o
BE
C
= 0)
HIGH VOLTAGE FAST-SWITCHING
= 0)
high
NPN POWER TRANSISTOR
INTERNAL SCHEMATIC DIAGRAM
-65 to 150
Value
(TO-251)
700
400
150
20
9
2
4
1
2
BULD118D-1
IPAK
1
2
3
Unit
o
o
W
V
V
V
A
A
A
A
C
C
1/7

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BULD118D Summary of contents

Page 1

... Storage Temperature stg T Max. Operating Junction Temperature j June 2001 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR high INTERNAL SCHEMATIC DIAGRAM = < 5 ms) p < BULD118D IPAK (TO-251) Value Unit 700 V 400 ...

Page 2

... BULD118D-1 THERMAL DATA R Thermal Resistance Junction-Case thj-case R Thermal Resistance Junction-Ambient thj-amb ELECTRICAL CHARACTERISTICS (T Symbol Parameter I Collector Cut-off CES Current ( Emitter-Base Voltage EBO V Collector-Emitter CEO(sus) Sustaining Voltage I Collector-Emitter CEO Leakage Current V Collector-Emitter CE(sat) Saturation Voltage V Base-Emitter BE(sat) Saturation Voltage h DC Current Gain ...

Page 3

... Safe Operating Areas DC Current Gain Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BULD118D-1 3/7 ...

Page 4

... BULD118D-1 Inductive Fall Time Resistive Fall Time Reverse Biased SOA 4/7 Inductive Storage Time Resistive Load Storage Time ...

Page 5

... Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor BULD118D-1 5/7 ...

Page 6

... BULD118D-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.20 A1 0.90 A3 0.70 B 0. 0.45 C2 0.48 D 6.00 E 6.40 G 4.40 H 15.90 L 9. 6/7 mm TYP. MAX. MIN. 2.40 0.087 1.10 0.035 1.30 0.028 0.90 0.025 5.40 0.204 0.85 0.30 0.95 0.60 0.018 0.60 0.019 6.20 0.237 6.60 0.252 4.60 0.173 16.30 0.626 9.40 0.354 1.20 0.031 0.80 1. inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 ...

Page 7

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com BULD118D-1 7/7 ...

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