DS1265Y Maxim, DS1265Y Datasheet

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DS1265Y

Manufacturer Part Number
DS1265Y
Description
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits
Manufacturer
Maxim
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1265Y-70
Manufacturer:
DALLAS
Quantity:
28
Part Number:
DS1265Y-70
Quantity:
87
19-5616; Rev 11/10
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Unlimited write cycles
 Low-power CMOS operation
 Read and write access times of 70 ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry which constantly monitors V
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
www.maxim-ic.com
absence of external power
loss
disconnected to retain freshness until power is
applied for the first time
(DS1265AB)
-40°C to +85°C, designated IND
CC
operating range (DS1265Y)
CC
operating range
CC
for an out-of-tolerance condition. When such a condition occurs,
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A19
DQ0 - DQ7
V
GND
NC
CE
WE
OE
CC
36-Pin ENCAPSULATED PACKAGE
GND
DQ1
DQ2
DQ0
A18
A16
A14
A12
NC
NC
A7
A6
A5
A4
A3
A2
A1
A0
8M Nonvolatile SRAM
740-mil EXTENDED
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DS1265Y/AB
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
CC

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DS1265Y Summary of contents

Page 1

... Low-power CMOS operation  Read and write access times  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time  Full ±10% V operating range (DS1265Y) CC  Optional ±5% V operating range CC (DS1265AB)  Optional industrial temperature range of -40° ...

Page 2

... ODW DATA RETENTION MODE The DS1265AB provides full functional capability for V 4.5 volts. The DS1265Y provides full functional capability for V protects by 4.25 volts. Data is maintained in the absence of V The nonvolatile static RAMs constantly monitor V automatically write protect themselves, all inputs become don’t care, and all outputs become high- impedance ...

Page 3

... Write Protection Voltage (DS1265AB) Write Protection Voltage (DS1265Y) CAPACITANCE PARAMETER Input Capacitance Output Capacitance SYMBOL MIN TYP V 4.75 5 4 =5V ±5% for DS1265AB See Note 10) (V =5V ±10% for DS1265Y SYMBOL MIN TYP 1.0 CCS1 I 100 CCS2 I CCO1 V 4.50 4 ...

Page 4

... WR1 t WR2 15 t ODW t 5 OEW DH1 t 10 DH2 DS1265Y/AB =5V ±5% for DS1265AB) CC =5V ±10% for DS1265Y) CC UNITS NOTES MAX ...

Page 5

... TIMING DIAGRAM: WRITE CYCLE 1 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND DS1265Y/AB ...

Page 6

... DR during write cycle, the output buffers remain in a high-impedance state measured from the latter going high going high DS1265Y/ See Note 10) A TYP MAX UNITS NOTES µs 1.5 µs µ 125 +25°C) ...

Page 7

... Output: 1.5V Input pulse Rise and Fall Times SUPPLY TOLERANCE 5V ± ± ± 10% 5V ± 10% www.maxim-ic.com/package OUTLINE NO. MDT36+1 21-0245 DS1265Y/AB low transition, CE starting from the time power SPEED GRADE PIN-PACKAGE (ns) 36 740 EDIP 70 36 740 EDIP ...

Page 8

... Absolute Maximum Ratings section; removed the -100 MIN/MAX information from the AC Electrical 11/10 Characteristics table; updated the Ordering Information table (removed -100 parts and leaded -70 parts); replaced the package outline drawing with the Package Information table DESCRIPTION DS1265Y/AB PAGES CHANGED ...

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