AP0403GH Advanced Power Electronics Corp., AP0403GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness

AP0403GH

Manufacturer Part Number
AP0403GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP0403GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
4.5
Rds(on) / Max(m?) Vgs@4.5v
6.5
Qg (nc)
16.5
Qgs (nc)
3
Qgd (nc)
9.6
Id(a)
75
Pd(w)
44.6
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
44.6
±20
300
30
75
50
DS(ON)
DSS
G
Value
62.5
2.8
110
D
S
AP0403GH
TO-252(H)
4.5mΩ
200811052
Units
Units
℃/W
℃/W
℃/W
30V
75A
W
V
V
A
A
A
1

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AP0403GH Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 4 1 Parameter AP0403GH RoHS-compliant Product BV 30V DSS R 4.5mΩ DS(ON) I 75A □ S ...

Page 2

... AP0403GH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP0403GH o T =150 C 10V C 7 .0V 6.0V 5 =4.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...

Page 4

... AP0403GH 8 I =30A D V =15V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 Laser Marking 0403GH YWWSSS 0.127~0.381 C Part Number Package Code LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 A3 0.40 0.50 B1 0.40 0.70 D 6.00 6.50 D1 4.80 5. ...

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