AP1003BST Advanced Power Electronics Corp., AP1003BST Datasheet
AP1003BST
Specifications of AP1003BST
Related parts for AP1003BST
AP1003BST Summary of contents
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... Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) Description The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. TM ...
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... AP1003BST Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... Fig 2. Typical Output Characteristics 2 I =13A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1 0.8 0.6 0.4 0.2 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1003BST o T =150 C 10V A 7.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... AP1003BST 10 I =11A D V =15V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...