AP1004CMX Advanced Power Electronics Corp., AP1004CMX Datasheet
AP1004CMX
Specifications of AP1004CMX
Related parts for AP1004CMX
AP1004CMX Summary of contents
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... Low Profile ( < 0.7mm ) ▼ Compatible with DirectFET® Package MX Footprint and Outline Description The AP1004CMX used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. TM(A) ...
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... AP1004CMX Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Pre-V Gate-Source Charge gs1 th Q Post-V Gate-Source Charge gs2 th Q Gate-Drain ("Miller") Charge ...
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... Fig 2. Typical Output Characteristics 2 I =32A D V =10V G 1.6 1.2 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 I =50mA D 1 0.8 0.6 0.4 0.2 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1004CMX o 10V T =150 C A 7.0V 6.0V 5.0V V =4.0V G 2.0 3.0 4.0 5 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 o T ...
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... AP1004CMX 10 I =25A D V =13V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS ...