AP1203GH Advanced Power Electronics Corp., AP1203GH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP1203GH

Manufacturer Part Number
AP1203GH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP1203GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
22
Qg (nc)
6.7
Qgs (nc)
1.8
Qgd (nc)
4.3
Id(a)
37
Pd(w)
27.8
Configuration
Single N
Package
TO-252
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
RoHS-compliant Product
3
-55 to 150
-55 to 150
Rating
BV
R
I
D
23.6
27.8
+20
150
30
37
DS(ON)
DSS
G
Value
62.5
4.5
D
S
AP1203GH
TO-252(H)
12mΩ
200812291
Units
Units
℃/W
℃/W
30V
37A
W
V
V
A
A
A
1

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AP1203GH Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP1203GH RoHS-compliant Product BV 30V DSS R 12mΩ DS(ON) I 37A □ S TO-252(H) ...

Page 2

... AP1203GH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... G 0 4.0 5.0 0.0 1.0 Fig 2. Typical Output Characteristics 2.0 I =20A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1203GH 10V o C 8.0V 7.0V 6.0V V =4.0V G 2.0 3.0 4.0 5 Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( C) j 150 ...

Page 4

... AP1203GH 10 I =20A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...

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