Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness

 

AP2301GN

Manufacturer Part NumberAP2301GN
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP2301GN datasheets

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Specifications of AP2301GN

Vds-20VVgs±12V
Rds(on) / Max(m?) Vgs@4.5v130Rds(on) / Max(m?) Vgs@2.5v190
Qg (nc)5Qgs (nc)1
Qgd (nc)2Id(a)-2.6
Pd(w)1.38ConfigurationSingle P
PackageSOT-23  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
The SOT-23 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
SOT-23
G
Parameter
3
3
1
Parameter
3
AP2301GN
RoHS-compliant Product
BV
-20V
DSS
R
130mΩ
DS(ON)
I
- 2.6A
D
D
G
S
Rating
Units
- 20
+12
-2.6
-2.1
-10
1.38
0.01
W/℃
-55 to 150
-55 to 150
Value
Unit
90
℃/W
200902047
V
V
A
A
A
W
℃
℃
1

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AP2301GN Summary of contents

  • Page 1

    ... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter Parameter 3 AP2301GN RoHS-compliant Product BV -20V DSS R 130mΩ DS(ON 2. Rating Units - 20 +12 -2.6 -2 ...

  • Page 2

    ... AP2301GN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1 -2. -5V GS ℃ 1.6 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance 1.5 1 0.5 0.0 1.1 1.3 -50 Fig 6. Gate Threshold Voltage v.s. AP2301GN =150 - - - Drain-to-Source Voltage ( 100 Junction Temperature ( C) ...

  • Page 4

    ... AP2301GN - -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 1 0.1 T =25 °C A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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