AP2R803GH Advanced Power Electronics Corp., AP2R803GH Datasheet
AP2R803GH
Specifications of AP2R803GH
Related parts for AP2R803GH
AP2R803GH Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter AP2R803GH RoHS-compliant Product BV 30V DSS R 2.8mΩ DS(ON) I 75A □ S TO-252(H) Rating ...
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... AP2R803GH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2.0 I =40A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP2R803GH o T =150 C 10V C 7 .0V 6.0V 5 =4.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...
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... AP2R803GH 10 I =30A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...