AP40N03GS Advanced Power Electronics Corp., AP40N03GS Datasheet

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... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOS FET G D TO-263 S Parameter @ 10V GS @ 10V GS 1 Parameter AP40N03GS RoHS-compliant Product BV 30V DSS R 17mΩ DS(ON) I 40A Rating Units 30 ...

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... AP40N03GS Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Forward Leakage GSS Q Total Gate Charge ...

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... V Fig 2. Typical Output Characteristics 2.0 I =18A D V =10V G 1.4 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 1.8 1.6 1 1.2 1.0 1 -50 Fig 6. Gate Threshold Voltage v.s. AP40N03GS o 10V C 9.0V 8.0V 7.0V 6.0V 5.0V 4.0V V =3.0V G 4.0 6.0 8.0 10.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 150 Junction Temperature ( ...

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... AP40N03GS 16 I =18A =16V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 Operation in this area limited by R DS(ON = Single Pulse 1 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...