Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP40P03GI

Manufacturer Part NumberAP40P03GI
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP40P03GI datasheet
 


Specifications of AP40P03GI

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v28Rds(on) / Max(m?) Vgs@4.5v50
Qg (nc)15Qgs (nc)3
Qgd (nc)10Id(a)-30
Pd(w)31.3ConfigurationSingle P
PackageTO-220CFM  
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Advanced Power
Electronics Corp.
▼ Lower On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
Continuous Drain Current, V
I
@T
=25℃
D
C
Continuous Drain Current, V
I
@T
=100℃
D
C
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
C
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
G
S
Parameter
@ 10V
GS
@ 10V
GS
1
Parameter
AP40P03GI
RoHS-compliant Product
BV
-30V
DSS
R
28mΩ
DS(ON)
I
-30A
D
G
D
TO-220CFM(I)
S
Rating
Units
-30
+20
-30
-18
-120
31.3
W
0.25
W/℃
-55 to 150
-55 to 150
Value
Units
4
℃/W
65
℃/W
200812303
V
V
A
A
A
1

AP40P03GI Summary of contents

  • Page 1

    ... Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP40P03GI RoHS-compliant Product BV -30V DSS R 28mΩ DS(ON) I -30A TO-220CFM(I) S Rating Units -30 ...

  • Page 2

    ... AP40P03GI Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

  • Page 3

    ... Fig 2. Typical Output Characteristics 1 - 1.4 G ℃ =25 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance 1.4 1.2 1 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP40P03GI -10V o C -7.0V -5.0V -4. -3 Drain-to-Source Voltage ( =-10V 0 50 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...

  • Page 4

    ... AP40P03GI =- Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

  • Page 5

    ... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-220CFM E E φ φ Part Marking Information & Packing : TO-220CFM LOGO 40P03GI YWWSSS Part Number Package Code Meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y: ...