AP40P03GI Advanced Power Electronics Corp., AP40P03GI Datasheet - Page 3

• Manufacturer Part Number: AP40P03GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP40P03GI

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): -30
• Pd(w): 31.3
• Configuration: Single P
• Package: TO-220CFM

120
100
80
60
40
20
58
48
38
28
18
18
15
12
0
9
6
3
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
= 25
0.2
-V
Reverse Diode
o
-V
-V
C
DS
4
2
T
SD
GS
0.4
, Drain-to-Source Voltage (V)
j
=150
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
0.6
C
4
6
0.8
T
I
T
1
D
j
C
=25
8
6
= -10 A
V
=25
G
o
= -3.0 V
1.2
℃
C
-4.5V
-7.0V
-5.0V
-10V
1.4
10
8
1.6
1.4
1.2
1.0
0.8
0.6
100
1.4
1.2
1.0
0.8
0.6
0.4
80
60
40
20
0
-50
-50
0
Fig 6. Gate Threshold Voltage v.s.
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
T
A
I
= 1 5 0
V
D
G
=- 18 A
Junction Temperature
=-10V
v.s. Junction Temperature
-V
T
T
o
DS
0
2
0
j
j
C
, Junction Temperature (
, Junction Temperature (
, Drain-to-Source Voltage (V)
50
50
4
AP40P03GI
100
100
6
V
o
o
G
C)
C)
= -3.0 V
-4.5V
-7.0V
-5.0V
-10V
150
150
8
3