AP40P03GI Advanced Power Electronics Corp., AP40P03GI Datasheet - Page 4

• Manufacturer Part Number: AP40P03GI
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP40P03GI

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 15
• Qgs (nc): 3
• Qgd (nc): 10
• Id(a): -30
• Pd(w): 31.3
• Configuration: Single P
• Package: TO-220CFM

AP40P03GI
1000
100
10
12
1
9
6
3
0
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
90%
10%
V
V
Single Pulse
GS
V
T
DS
I
DS
D
c
=25
-V
5
=-1 8 A
=- 25 V
DS
Q
o
t
C
G
, Drain-to-Source Voltage (V)
d(on)
, Total Gate Charge (nC)
10
1
t
r
15
20
10
t
d(off)
25
t
f
100ms
100us
10ms
1ms
DC
1s
100
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.00001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
Duty factor=0.5
0.01
V
0.02
0.05
0.2
0.1
G
Single Pulse
0.0001
5
-V
Q
GS
DS
9
t , Pulse Width (s)
0.001
, Drain-to-Source Voltage (V)
Q
Q
13
Charge
G
GD
0.01
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
T
f=1.0MHz
x R
1
thjc
25
+ T
C
C
Q
C
C
oss
rss
iss
10
29
4