AP40T03GP Advanced Power Electronics Corp., AP40T03GP Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP40T03GP

Manufacturer Part Number
AP40T03GP
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP40T03GP.pdf (4 pages)

Specifications of AP40T03GP

Vds
30V
Vgs
±25V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
8.8
Qgs (nc)
2.5
Qgd (nc)
5.8
Id(a)
28
Pd(w)
31.25
Configuration
Single N
Package
TO-220

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AP40T03GP
Manufacturer:
APEC
Quantity:
2 090
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
AP40T03GP
Manufacturer:
FSC
Quantity:
5 000
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
▼ RoHS Compliant
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
applications such as DC/DC converters. The through-hole version
(AP40T03J) are available for low-profile applications.
(AP40T03GP) are available for low-profile applications.
The Advanced Power MOSFETs from APEC provide the
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
G
GS
GS
@ 10V
@ 10V
D
D
S
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
Pb Free Plating Product
G
-55 to 150
-55 to 150
D
Rating
BV
R
I
31.25
D
0.25
±25
30
28
24
95
G D
DS(ON)
S
DSS
Value
AP40T03GS/P
4.0
62
S
TO-263(S)
TO-220(P)
200331053-1/4
25mΩ
Units
W/℃
Units
℃/W
℃/W
30V
28A
W
℃
℃
V
V
A
A
A

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AP40T03GP Summary of contents

Page 1

... DC/DC converters. The through-hole version applications such as DC/DC converters. The through-hole version (AP40T03J) are available for low-profile applications. (AP40T03GP) are available for low-profile applications. Absolute Maximum Ratings Symbol V Drain-Source Voltage ...

Page 2

AP40T03GS/P Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage ...

Page 3

T = 0.0 1.0 2.0 3 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) ...

Page 4

AP40T03GS =18A =10V DS V =15V DS V =20V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = ...

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