AP4230GM-HF Advanced Power Electronics Corp., AP4230GM-HF Datasheet

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AP4230GM-HF

Manufacturer Part Number
AP4230GM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4230GM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
45
Qg (nc)
4.2
Qgs (nc)
1.1
Qgd (nc)
2.5
Id(a)
7
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4230GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
3
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
BV
R
I
D1
D
+20
5.5
30
30
DS(ON)
7
2
D1
SO-8
DSS
AP4230GM-HF
Value
D2
S1
D1
62.5
D2
G2
S1
G1
25mΩ
200909171
S2
Units
℃/W
30V
Unit
7A
W
G2
V
V
A
A
A
D2
S2
1

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AP4230GM-HF Summary of contents

Page 1

... STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4230GM-HF Halogen-Free Product BV 30V DSS R 25mΩ DS(ON ...

Page 2

... AP4230GM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 o =25 C 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4230GM-HF o 10V T = 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...

Page 4

... AP4230GM- =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

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