AP4228GM Advanced Power Electronics Corp., AP4228GM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4228GM

Manufacturer Part Number
AP4228GM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4228GM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
26
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
7.7
Qgs (nc)
1.4
Qgd (nc)
4.1
Id(a)
6.8
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4228GM
Manufacturer:
APEC
Quantity:
9 000
Part Number:
AP4228GM
Manufacturer:
APEC
Quantity:
25 000
Part Number:
AP4228GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP4228GM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+ 20
6.8
5.5
30
40
DS(ON)
2
DSS
Value
62.5
D1
S1
AP4228GM
G2
26mΩ
200809183
6.8A
Units
W/℃
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4228GM Summary of contents

Page 1

... J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4228GM RoHS-compliant Product BV 30V DSS R 26mΩ DS(ON Rating Units 6.8 5 0.016 W/℃ ...

Page 2

... AP4228GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 1.2 1.0 0.8 0.6 0.4 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4228GM 10V o C 7.0V 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP4228GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4228GM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number meet Rohs requirement ...

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