AP4226GM Advanced Power Electronics Corp., AP4226GM Datasheet
AP4226GM
Specifications of AP4226GM
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AP4226GM Summary of contents
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... Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 Max. AP4226GM Pb Free Plating Product BV 30V DSS R 18mΩ DS(ON Rating Units 30 V ± 8 ...
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... AP4226GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... I =6. 1.6 =25 ℃ ℃ ℃ ℃ V =10V 1.4 1.2 1 0.8 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.50 2.25 2.00 1.75 1.50 1.25 1.00 1.6 -50 Fig 6. Gate Threshold Voltage v.s. AP4226GM 10V o C 5.0V 4.0V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 Junction Temperature ( C ) ...
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... AP4226GM =15V DS V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11. Switching Time Waveform ...