AP4224GM Advanced Power Electronics Corp., AP4224GM Datasheet
AP4224GM
Specifications of AP4224GM
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AP4224GM Summary of contents
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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4224GM Pb Free Plating Product BV 30V DSS R 14mΩ DS(ON) I 10A Rating Units 30 ± ...
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... AP4224GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 1.6 V =10V G 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 3.0 2.5 2 1.5 1.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP4224GM o 10V C 7.0V 5. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( ...
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... AP4224GM =15V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...