AP40U03GH Advanced Power Electronics Corp., AP40U03GH Datasheet

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness

AP40U03GH

Manufacturer Part Number
AP40U03GH
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP40U03GH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
25
Rds(on) / Max(m?) Vgs@4.5v
40
Qg (nc)
8
Qgs (nc)
1.5
Qgd (nc)
5
Id(a)
20
Pd(w)
15
Configuration
Single N
Package
TO-252
▼ Lower Gate Charge
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
Max.
Max.
RoHS-compliant Product
-55 to 175
-55 to 175
Rating
BV
R
I
D
±20
0.1
30
20
14
60
15
DS(ON)
G
DSS
Value
D
110
10
S
AP40U03GH
TO-252(H)
200720071-1/4
25mΩ
Units
W/℃
Units
℃/W
℃/W
30V
20A
W
V
V
A
A
A

Related parts for AP40U03GH

AP40U03GH Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP40U03GH RoHS-compliant Product BV 30V DSS R 25mΩ DS(ON) I 20A □ S TO-252(H) Rating ...

Page 2

... AP40U03GH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =12A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1 0.8 0.4 0.0 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP40U03GH C 10V 7 .0V 5.0V 4 =3.0V G 1.0 2.0 3.0 4.0 , Drain-to-Source Voltage ( 100 150 200 Junction Temperature ( 100 150 Junction Temperature ( ...

Page 4

... AP40U03GH 16 I =12A =15V DS V =18V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse 0 0 ,Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) r Fig 11 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 (0.1mm A3 Part Marking Information & Packing : TO-252 40U03GH YWWSSS 0.127~0.381 C Part LOGO Date Code (YWWSSS) Millimeters SYMBOLS MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.5 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1. 0.35 0.50 0.65 1.All Dimensions Are in Millimeters. ...

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