AP4413GM Advanced Power Electronics Corp., AP4413GM Datasheet
AP4413GM
Specifications of AP4413GM
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AP4413GM Summary of contents
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... J Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4413GM Pb Free Plating Product BV -20V DSS R 30mΩ DS(ON) I -7. Rating Units -20 ±20 -7.8 -6.2 -30 2.5 0.02 W/℃ ...
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... AP4413GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =-10V G 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance = 1.2 1.4 -50 Fig 6. Gate Threshold Voltage v.s. AP4413GM -10V o -7.0V C -5.0V -4. 2 Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 ...
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... AP4413GM - -16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...