AP4411GM Advanced Power Electronics Corp., AP4411GM Datasheet

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... J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4411GM Pb Free Plating Product BV -30V DSS R 25mΩ DS(ON) I -8. Rating Units -30 ± 25 -8.2 -6.5 -40 2.5 0.02 W/℃ ...

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... AP4411GM Electrical Characteristics@T Symbol BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... Fig 2. Typical Output Characteristics 1.80 I =-8.0A =-8.0A D 1.60 =25 ℃ ℃ ℃ ℃ V =-10V G A 1.40 1.20 1.00 0.80 0.60 11 -50 Fig 4. Normalized On-Resistance 3.0 2 2.0 1.5 1.0 -50 1.2 1.4 Fig 6. Gate Threshold Voltage v.s. AP4411GM o C -10V -8.0V -6.0V -4.5V V =-4. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 Junction Temperature ( C) j ...

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... AP4411GM =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 10 1 0.1 =25 ℃ ℃ ℃ ℃ Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11 ...