Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4500GM

Manufacturer Part NumberAP4500GM
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4500GM datasheet
 


Specifications of AP4500GM

Vds20VVgs±12V
Rds(on) / Max(m?) Vgs@4.5v30Rds(on) / Max(m?) Vgs@2.5v45
Qg (nc)10Qgs (nc)1.1
Qgd (nc)4.1Id(a)6
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
D2
D2
D1
D1
G2
P-CH BV
S2
G1
S1
SO-8
N-channel
20
+12
3
6
3
4.8
1
20
Parameter
3
AP4500GM
20V
DSS
R
30mΩ
DS(ON)
I
6A
D
-20V
DSS
R
50mΩ
DS(ON)
I
-5A
D
D1
D2
G2
G1
S1
S2
Rating
Units
P-channel
-20
V
+12
V
-5
A
-4
A
-20
A
2.0
W
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
201009305
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AP4500GM Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 N-channel Parameter 3 AP4500GM 20V DSS R 30mΩ DS(ON -20V DSS R 50mΩ DS(ON Rating Units P-channel ...

  • Page 2

    ... AP4500GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... =- =-16V DS V =-4. =-10V =3.3Ω,V =- =10Ω = =-20V DS f=1.0MHz Test Conditions 2 I =-1.8A =-5A, V =0V dI/dt=100A/µs AP4500GM Min. Typ. Max. Units - -0 2 -25 = +100 - 1 4 ...

  • Page 4

    ... AP4500GM N-Channel 20 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... DC 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4500GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

  • Page 6

    ... AP4500GM P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics -1 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... DC 0.01 Single Pulse 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4500GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...