AP4500GM Advanced Power Electronics Corp., AP4500GM Datasheet - Page 2

• Manufacturer Part Number: AP4500GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4500GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 10
• Qgs (nc): 1.1
• Qgd (nc): 4.1
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
t
Q
AP4500GM
N-CH Electrical Characteristics@T
Source-Drain Diode
DSS
GSS
d(on)
r
d(off)
f
rr
fs
GS(th)
SD
DS(ON)
g
gs
gd
iss
oss
rss
rr
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
2
2
2
2
j
=70
2
o
j
C)
=25
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/µs
D
D
S
S
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
=6A
=1A
G
D
=1.7A, V
=6A, V
o
=3.3Ω,V
=10Ω
=0V, I
=4.5V, I
=2.5V, I
=V
=10V, I
=20V, V
=20V ,V
=+12V, V
=16V
=4.5V
=10V
=0V
=20V
C(unless otherwise specified)
GS
Test Conditions
Test Conditions
GS
, I
D
GS
D
=0V,
=250uA
D
GS
D
D
=250uA
GS
GS
=6A
=6A
=5.2A
=0V
DS
=5V
=0V
=0V
=0V
Min.
Min.
0.5
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
570
1.1
4.1
10
10
21
90
85
21
14
6
7
5
-
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
910
1.2
1.2
30
45
25
15
1
-
-
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
ns
nC
V
V
S
V
2