AP4500GM Advanced Power Electronics Corp., AP4500GM Datasheet - Page 7

• Manufacturer Part Number: AP4500GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4500GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 10
• Qgs (nc): 1.1
• Qgd (nc): 4.1
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 11. Switching Time Waveform
Single Pulse
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
I
V
T
90%
10%
D
Operation in this
V
V
DS
area limited by
A
= -5A
GS
R
DS
=25
= -16V
DS(ON)
o
-V
C
Q
0.1
DS
8
t
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
16
1
t
d(off)
10
24
t
f
100ms
100us
10ms
1ms
DC
1s
100
32
Fig 10. Effective Transient Thermal Impedance
10000
0.01
1000
0.1
100
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
-4.5V
30
0.05
0.02
0.2
0.1
0.01
V
Duty factor=0.5
Single Pulse
G
0.001
5
-V
Q
GS
DS
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
9
Q
Q
0.1
G
GD
-30
Charge
13
1
17
P
AP4500GM
DM
Duty factor = t/T
Peak T
R
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
21
x R
100
C
C
thja
C
+ T
Q
iss
rss
oss
a
1000
25
7