AP4501AGM Advanced Power Electronics Corp., AP4501AGM Datasheet
AP4501AGM
Specifications of AP4501AGM
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AP4501AGM Summary of contents
Page 1
... Data and specifications subject to change without notice RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 S1 N-channel 30 +20 3 7 Parameter 3 AP4501AGM 30V DSS R 28mΩ DS(ON -30V DSS R 50mΩ DS(ON) I -5. Rating Units P-channel ...
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... AP4501AGM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...
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... D V =-15V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-2.6A =-5A dI/dt=100A/µs AP4501AGM Min. Typ. Max. Units - = = -25 = +100 - ...
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... AP4501AGM N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... Duty factor=0.5 100us 0.2 1ms 0.1 0.1 10ms 0.05 100ms 0. 0.01 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4501AGM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...
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... AP4501AGM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics -4 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...
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... DC Single Pulse 0.01 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4501AGM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...