AP4501AGM Advanced Power Electronics Corp., AP4501AGM Datasheet - Page 5

• Manufacturer Part Number: AP4501AGM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501AGM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
V
90%
10%
T
V
DS
A
GS
=25
3
V
o
DS
Q
C
t
d(on)
G
V
, Drain-to-Source Voltage (V)
I
DS
, Total Gate Charge (nC)
6
1
D
= 6 A
= 24 V
t
r
9
12
10
t
d(off)
t
f
15
100us
1ms
10ms
100ms
1s
DC
100
18
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
Duty factor=0.5
V
0.02
0.01
0.05
0.1
0.2
0.001
G
5
Single Pulse
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
-30
17
1
AP4501AGM
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
25
100
thja
+ T
C
C
Q
C
a
iss
rss
oss
1000
29
5