AP4501CGM-HF Advanced Power Electronics Corp., AP4501CGM-HF Datasheet - Page 6

• Manufacturer Part Number: AP4501CGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501CGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 25
• Rds(on) / Max(m?) Vgs@4.5v: 45
• Qg (nc): 4.6
• Qgs (nc): 1.2
• Qgd (nc): 3
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
AP4501CGM-HF
20
16
12
120
110
100
8
4
0
90
80
70
60
6
5
4
3
2
1
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
0
2
Fig 5. Forward Characteristic of
T
A
=25
0.2
-V
o
-V
Reverse Diode
-V
GS
C
DS
SD
1
4
T
, Gate-to-Source Voltage (V)
0.4
j
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
=150
o
0.6
C
2
6
T
0.8
I
D
A
=25
= -3 A
T
o
1
C
j
=25
3
8
V
G
o
= - 4.0V
C
1.2
-10V
-7.0V
-6.0V
-5.0V
1.4
4
10
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
30
I
A
G
D
= 150
= - 10V
= -4 A
-V
v.s. Junction Temperature
Junction Temperature
1
T
o
DS
C
T
j
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
-30
50
50
3
V
100
100
o
G
C)
o
4
= - 4.0V
C)
-10V
-7.0V
-6.0V
-5.0V
150
5
150
6