AP4501GD Advanced Power Electronics Corp., AP4501GD Datasheet - Page 6

• Manufacturer Part Number: AP4501GD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 9
• Qgs (nc): 2
• Qgd (nc): 5
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

P-Channel
AP4501GD
100.00
10.00
1.00
0.10
0.01
240
190
140
20
15
10
90
40
5
0
0.1
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
j
=150
-V
-V
-V
Reverse Diode
SD
DS
GS
0.4
1
4
o
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
,Gate-to-Source Voltage (V)
C
T
A
=25
0.7
2
6
o
C
T
T
j
I
=25
V
A
D
3
1
8
G
=25 ℃
=- 3 A
= - 4. 0 V
o
C
-8.0V
-6.0V
-10V
1.3
4
10
1.4
1.1
0.8
0.5
20
15
10
1.8
1.4
0.6
5
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
D
= -10V
=-5A
v.s. Junction Temperature
-V
T
Junction Temperature
j
DS
1
0
, Junction Temperature (
0
T
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
50
50
2
T
A
=150
o
C
V
o
100
100
3
C)
G
= - 4. 0 V
o
C)
-8.0V
-6.0V
-10V
150
150
4
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