AP4501GM Advanced Power Electronics Corp., AP4501GM Datasheet - Page 4

• Manufacturer Part Number: AP4501GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4501GM
40
30
20
10
20
16
12
10
8
4
0
8
6
4
2
0
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
V
Reverse Diode
V
T
DS
SD
GS
j
4
2
=150
, Drain-to-Source Voltage (V)
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
T
0.6
A
=25
4
6
℃
T
0.8
I
A
D
= 25
= 5A
T
o
1
j
C
=25
6
8
V
o
G
C
1.2
= 4.5V
8.0V
6.0V
5.0V
10V
1.4
8
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
1.8
1.4
1.0
0.6
8
4
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
30
I
G
D
=10V
=7A
V
T
v.s. Junction Temperature
Junction Temperature
2
T
DS
j
j
, Junction Temperature (
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
4
-30
50
50
T
A
=150
6
℃
o
100
100
o
C)
C)
8
V
G
=4.5V
8.0V
6.0V
5.0V
10V
10
150
150
4