AP4501GM Advanced Power Electronics Corp., AP4501GM Datasheet - Page 5

• Manufacturer Part Number: AP4501GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
Single Pulse
V
90%
10%
I
V
T
DS
D
DS
GS
A
= 6 A
= 24 V
=25
3
V
o
DS
Q
t
C
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
6
1
t
r
9
12
10
t
d(off)
t
f
15
100us
1ms
10ms
100ms
1s
DC
100
18
Fig 10. Effective Transient Thermal Impedance
1200
1000
800
600
400
200
0.001
0.01
0
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
V
Duty factor=0.5
0.02
0.01
0.05
0.1
0.2
G
Single Pulse
5
0.001
V
Q
DS
GS
9
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
G
0.1
GD
Charge
-30
17
1
AP4501GM
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
25
100
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
5