AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet - Page 4

• Manufacturer Part Number: AP4501GSD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GSD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 8.4
• Qgs (nc): 2.1
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
AP4501GSD
0.01
100
0.1
40
30
20
10
70
40
10
10
1
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
A
T
=25
V
J
V
=150
GS
V
Reverse Diode
DS
o
SD
C
, Gate-to-Source Voltage (V)
1
, Drain-to-Source Voltage (V)
o
, Source-to-Drain Voltage (V)
C
0.4
5
2
0.8
8
T
T
I
J
3
D
A
=25
=25 ℃ ℃ ℃ ℃
=7A
V
G
o
8.0V
6.0V
5.0V
10V
=4. 0 V
C
1.2
11
4
2.5
1.5
0.5
1.4
0.8
0.2
36
24
12
0
2
3
2
1
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 6. Gate Threshold Voltage v.s.
T
Fig 4. Normalized On-Resistance
A
=150
V
I
T
G
V
D
Junction Temperature
= 10V
o
j
T
v.s. Junction Temperature
DS
=7A
C
, Junction Temperature (
j
0
0
, Drain-to-Source Voltage (V)
, Junction Temperature (
2
50
50
3
o
100
100
C )
o
V
C)
G
8.0V
6.0V
5.0V
10V
=4.0V
150
150
5