AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet - Page 5

• Manufacturer Part Number: AP4501GSD
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GSD

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 27
• Rds(on) / Max(m?) Vgs@4.5v: 50
• Qg (nc): 8.4
• Qgs (nc): 2.1
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: PDIP-8

N-Channel
0.01
100
0.1
12
10
9
6
3
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
90%
10%
V
I
Single Pulse
T
D
DS
GS
=7.0A
A
=25
V
V
V
V
Q
DS
o
DS
DS
DS
4
t
G
C
d(on)
, Drain-to-Source Voltage (V)
=16V
=20V
=24V
, Total Gate Charge (nC)
1
t
r
8
10
t
d(off)
12
t
f
100us
1ms
10ms
100ms
1s
10s
DC
100
16
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
Duty Factor = 0.5
V
0.02
0.01
0.05
Single Pulse
0.1
0.2
0.001
G
V
7
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
13
Q
0.1
Q
Charge
G
GD
1
19
AP4501GSD
P
DM
Duty Factor = t/T
Peak T
R
10
thja
=90
j
= P
o
t
C/W
f=1.0MHz
25
DM
T
x R
C
C
C
100
thja
iss
oss
rss
Q
+ T
a
1000
31