AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet - Page 6

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4501GSD

Manufacturer Part Number
AP4501GSD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GSD

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
27
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
8.4
Qgs (nc)
2.1
Qgd (nc)
4.7
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
P-Channel
AP4501GSD
0.01
120
40
30
20
10
0.1
0
90
60
30
10
1
0.1
Fig 1. Typical Output Characteristics
0
3
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
T
T
j
=150
A
-V
=25
-V
-V
o
C
GS
Reverse Diode
SD
DS
o
0.4
C
1
5
, Gate-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.7
2
7
T
j
=25
1
3
9
o
V
C
T
I
G
A
D
-8.0V
-6.0V
-5.0V
= - 4. 0 V
-10V
=25 ℃ ℃ ℃ ℃
=-5.0A
1.3
11
4
2.5
1.5
0.5
36
24
12
1.8
1.6
1.4
1.2
0.8
0.6
0
3
2
1
0
1
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
A
D
G
=150
=-5.0A
-V
T
v.s. Junction Temperature
Junction Temperature
= -10V
1
T
j
DS
j
0
0
, Junction Temperature (
, Junction Temperature (
o
, Drain-to-Source Voltage (V)
C
2
50
50
3
o
100
100
C)
o
V
C )
G
4
-8.0V
-6.0V
-5.0V
-10V
= - 4. 0 V
150
150
5

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