AP4501GSD Advanced Power Electronics Corp., AP4501GSD Datasheet - Page 7

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4501GSD

Manufacturer Part Number
AP4501GSD
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4501GSD

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
27
Rds(on) / Max(m?) Vgs@4.5v
50
Qg (nc)
8.4
Qgs (nc)
2.1
Qgd (nc)
4.7
Id(a)
7
Pd(w)
2
Configuration
Complementary N-P
Package
PDIP-8
P-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Gate Charge Characteristics
I
V
V
90%
10%
V
D
Single Pulse
DS
T
DS
GS
=-5.0A
=-24V
A
-V
=25
Q
DS
G
4
o
t
d(on)
C
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
r
8
10
t
d(off)
12
t
f
100us
1ms
10ms
100ms
1s
10s
DC
100
16
Fig 10. Typical Capacitance Characteristics
0.001
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
V
0.02
Duty Factor = 0.5
0.01
0.05
Single Pulse
0.1
G
0.001
0.2
5
-V
Q
DS
GS
t , Pulse Width (s)
0.01
9
, Drain-to-Source Voltage (V)
0.1
13
Q
Q
Charge
G
GD
17
1
AP4501GSD
P
DM
Duty Factor = t/T
Peak T
R
thja
10
21
=90
j
o
= P
C/W
t
DM
f=1.0MHz
T
x R
100
25
thja
C
C
+ T
C
Q
iss
oss
a
rss
1000
29

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