AP4502AGM-HF Advanced Power Electronics Corp., AP4502AGM-HF Datasheet - Page 4

• Manufacturer Part Number: AP4502AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502AGM-HF

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 8
• Qgs (nc): 1
• Qgd (nc): 4
• Id(a): 8.5
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4502AGM-HF
30
20
10
40
30
20
10
0
8
6
4
2
0
0
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
1
V
V
1
V
SD
DS
GS
T
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
j
, Gate-to-Source Voltage (V)
=150
0.4
2
2
T
o
C
A
= 25
0.6
I
T
o
D
A
C
3
= 5 A
3
=25
0.8
o
C
T
j
=25
V
4
4
1
G
o
= 2.0 V
C
2.5V
5.0V
4.5V
3.5V
1.2
5
5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.6
1.2
0.8
0.4
30
20
10
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 8 A
= 4.5 V
v.s. Junction Temperature
Junction Temperature
V
T
T
DS
1
0
0
j
j
, Junction Temperature (
T
, Drain-to-Source Voltage (V)
, Junction Temperature (
A
= 150
o
C
50
50
2
100
100
3
o
o
C)
C)
V
G
= 2.0V
2.5V
5.0V
4.5V
3.5V
150
150
4
4