AP4502GM Advanced Power Electronics Corp., AP4502GM Datasheet - Page 5

• Manufacturer Part Number: AP4502GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 16
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 22
• Qgs (nc): 3
• Qgd (nc): 9
• Id(a): 8.3
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
Operation in this
T
area limited by
V
90%
10%
V
A
R
DS
GS
DS(ON)
=25
10
V
V
o
I
C
DS
Q
0.1
DS
t
D
d(on)
G
= 8 A
= 10 V
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
20
r
1
30
t
d(off)
10
40
t
f
100us
1ms
10ms
100ms
1s
DC
100
50
Fig 10. Effective Transient Thermal Impedance
10000
1000
100
0.001
10
0.01
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
0.02
0.2
V
0.1
0.05
0.01
Duty factor=0.5
Single Pulse
G
0.001
5
Q
V
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
G
0.1
GD
Charge
-30
13
1
17
AP4502GM
P
DM
Duty factor = t/T
Peak T
R
thja
10
=135
j
= P
t
o
C/W
f=1.0MHz
DM
C
C
C
21
T
x R
100
oss
rss
iss
thja
+ T
Q
a
1000
25
5