AP4502GM Advanced Power Electronics Corp., AP4502GM Datasheet - Page 7

• Manufacturer Part Number: AP4502GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4502GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@10v: 16
• Rds(on) / Max(m?) Vgs@4.5v: 18
• Rds(on) / Max(m?) Vgs@2.5v: 30
• Qg (nc): 22
• Qgs (nc): 3
• Qgd (nc): 9
• Id(a): 8.3
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
10
12
1
9
6
3
0
0.01
0.0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Single Pulse
90%
10%
V
Operation in this
V
T
area limited by
GS
A
DS
R
DS(ON)
=25
5.0
-V
o
Q
C
0.1
t
DS
d(on)
V
G
I
DS
, Total Gate Charge (nC)
10.0
, Drain-to-Source Voltage (V)
D
= -5A
= -16V
t
r
15.0
1
20.0
t
d(off)
10
t
25.0
f
100ms
100us
10ms
1ms
DC
1s
30.0
100
Fig 10. Effective Transient Thermal Impedance
10000
0.01
1000
0.1
100
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Waveform
-4.5V
30
0.05
0.02
0.2
0.1
0.01
V
Duty factor=0.5
Single Pulse
G
0.001
5
-V
Q
GS
DS
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
9
Q
Q
0.1
G
GD
-30
Charge
13
1
17
P
AP4502GM
DM
Duty factor = t/T
Peak T
R
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
21
x R
100
C
C
thja
C
+ T
Q
iss
rss
oss
a
1000
25
7