AP4503BGM-HF Advanced Power Electronics Corp., AP4503BGM-HF Datasheet - Page 7

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4503BGM-HF

Manufacturer Part Number
AP4503BGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4503BGM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
35
Qg (nc)
7
Qgs (nc)
2
Qgd (nc)
4
Id(a)
8.4
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4503BGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
P-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.1
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
V
V
Single Pulse
GS
DS
T
A
4
=25
I
V
-V
D
DS
Q
= -6A
t
o
DS
d(on)
= -15V
G
C
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
8
1
t
r
12
10
16
t
d(off)
t
f
20
100ms
100us
10ms
1ms
DC
1 s
100
24
Fig 10. Effective Transient Thermal Impedance
0.001
1600
1200
0.01
800
400
0.1
0
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
30
V
0.02
0.05
0.01
Single Pulse
0.2
0.1
Duty factor=0.5
G
0.001
5
-V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
AP4503BGM-HF
GD
-30
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
C
C
+ T
C
Q
a
oss
iss
rss
1000
29
7

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