AP4506GEH Advanced Power Electronics Corp., AP4506GEH Datasheet - Page 7

• Manufacturer Part Number: AP4506GEH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEH

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 24
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 9
• Pd(w): 3.1
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
Single Pulse
V
V
T
GS
DS
A
=25
-V
5
DS
Q
o
C
t
I
V
G
d(on)
, Drain-to-Source Voltage (V)
D
DS
, Total Gate Charge (nC)
= -5A
10
1
= -24V
t
r
15
20
10
t
d(off)
t
f
25
100ms
100us
10ms
1ms
DC
1s
100
30
Fig 10. Effective Transient Thermal Impedance
10000
0.01
1000
0.1
100
10
1
0.001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
0.01
-4.5V
0.02
Duty factor=0.5
0.05
0.1
V
Single Pulse
0.2
G
5
0.01
-V
Q
DS
GS
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
0.1
Q
13
G
GD
Charge
17
1
AP4506GEH
P
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
21
j
= P
t
f=1.0MHz
DM
10
T
x R
25
thja
+ T
C
C
C
Q
a
rss
iss
oss
100
29
7