AP4506GEM Advanced Power Electronics Corp., AP4506GEM Datasheet - Page 4

• Manufacturer Part Number: AP4506GEM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 6.4
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4506GEM
30
20
10
10
28
26
24
22
20
18
16
0
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
1
V
V
DS
SD
GS
4
, Drain-to-Source Voltage (V)
T
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.4
j
=150
2
T
o
A
C
0.6
= 25
6
T
I
o
A
3
C
D
=25
= 4 A
0.8
o
C
T
8
j
=25
4
V
1
G
o
=3.0V
7.0V
5.0V
4.5V
C
10V
1.2
5
10
1.8
1.6
1.4
1.2
1.0
0.8
1.6
1.2
0.8
0.4
30
20
10
0
-50
25
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
I
V
D
G
= 6 A
=10V
1
v.s. Junction Temperature
Junction Temperature
V
50
T
DS
T
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
75
50
3
T
A
100
= 150
4
o
C
100
o
o
125
C)
C)
V
5
G
=3.0V
7.0V
5.0V
4.5V
10V
150
150
6
4