Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness

AP4506GEM-HF

Manufacturer Part NumberAP4506GEM-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4506GEM-HF datasheet
 


Specifications of AP4506GEM-HF

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v30Rds(on) / Max(m?) Vgs@4.5v36
Qg (nc)8.3Qgs (nc)1.5
Qgd (nc)4Id(a)6.4
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
▼ RoHS Compliant
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D2
D2
D1
D1
G2
S2
G1
SO-8
S1
N-channel
3
3
1
Parameter
3
AP4506GEM-HF
Halogen-Free Product
N-CH BV
30V
DSS
R
30mΩ
DS(ON)
I
6.4A
D
P-CH BV
-30V
DSS
R
40mΩ
DS(ON)
I
-6A
D
D1
G1
G2
S1
Rating
Units
P-channel
30
-30
+20
+20
6.4
-6.0
5.1
-4.8
30
-30
2.0
-55 to 150
-55 to 150
Value
Unit
62.5
℃/W
200902103
D2
S2
V
V
A
A
A
W
1

AP4506GEM-HF Summary of contents

  • Page 1

    ... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 N-channel Parameter 3 AP4506GEM-HF Halogen-Free Product N-CH BV 30V DSS R 30mΩ DS(ON) I 6.4A D P-CH BV -30V DSS R 40mΩ DS(ON ...

  • Page 2

    ... AP4506GEM-HF N-CH Electrical Characteristics@ T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... V =+20V =- =-24V DS V =-4. =-15V =3.3Ω, =15Ω = =-20V DS f=1.0MHz Test Conditions 2 I =-1.5A =-5A dI/dt=-100A/µs AP4506GEM-HF Min. Typ. - =-250uA - 12.6 - 2 5.6 =-10V - 24 GS ...

  • Page 4

    ... AP4506GEM-HF N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 0.1 10ms 100ms 1s DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4506GEM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...

  • Page 6

    ... AP4506GEM-HF P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 0.1 100ms 1s DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4506GEM-HF f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. 0.02 T 0.01 Duty factor = t/T Peak ...