AP4506GEM-HF Advanced Power Electronics Corp., AP4506GEM-HF Datasheet - Page 5

• Manufacturer Part Number: AP4506GEM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 36
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 6.4
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
8
4
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
I
V
D
V
90%
10%
DS
Single Pulse
V
=6A
T
DS
GS
=24V
A
=25
Q
V
5
o
t
DS
G
C
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
1
t
r
10
10
t
d(off)
15
t
f
100ms
100us
10ms
1ms
DC
1s
20
100
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.01
0.02
V
0.05
0.1
Single Pulse
0.2
G
Duty factor=0.5
5
0.01
Q
V
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
Q
0.1
Q
13
G
GD
AP4506GEM-HF
Charge
17
1
P
DM
Duty factor = t/T
Peak T
R
thja
21
=135
j
= P
t
o
C/W
10
DM
f=1.0MHz
T
x R
25
thja
C
+ T
C
C
Q
a
oss
iss
rss
100
29
5